Part number: HY3008M
Manufacturer: HOOYI
File Size: 1.59MB
Download: 📄 Datasheet
Description: N-Channel Enhancement Mode MOSFET
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HY3008B - N-Channel Enhancement Mode MOSFET
(HOOYI)
.
HY3008P - N-Channel Enhancement Mode MOSFET
(HOOYI)
.
HY3008PM - N-Channel Enhancement Mode MOSFET
(HOOYI)
.
HY3008PS - N-Channel Enhancement Mode MOSFET
(HOOYI)
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HY3003 - N-Channel MOSFET
(HOOYI)
HY3003P/B
N-Channel Enhancement Mode MOSFET
Features
• 30V/100A
RDS(ON)= 3.5mΩ (typ.) @ VGS=10V
• 100% EAS Guaranteed • Super Low Gate Charge • Exce.
HY3003B - N-Channel MOSFET
(HOOYI)
HY3003P/B
N-Channel Enhancement Mode MOSFET
Features
• 30V/100A
RDS(ON)= 3.5mΩ (typ.) @ VGS=10V
• 100% EAS Guaranteed • Super Low Gate Charge • Exce.
HY3003P - N-Channel MOSFET
(HOOYI)
HY3003P/B
N-Channel Enhancement Mode MOSFET
Features
• 30V/100A
RDS(ON)= 3.5mΩ (typ.) @ VGS=10V
• 100% EAS Guaranteed • Super Low Gate Charge • Exce.
HY3007B - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY3007P/M/B/PS/PM
Features
• 68V / 120 A
RDS(ON)=
5.0
m
(typ.)
@
V =10V GS
• Avalanche Rated
• Reliable and Rugged
• Lead Free and Green .
HY3007M - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY3007P/M/B/PS/PM
Features
• 68V / 120 A
RDS(ON)=
5.0
m
(typ.)
@
V =10V GS
• Avalanche Rated
• Reliable and Rugged
• Lead Free and Green .
HY3007P - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY3007P/M/B/PS/PM
Features
• 68V / 120 A
RDS(ON)=
5.0
m
(typ.)
@
V =10V GS
• Avalanche Rated
• Reliable and Rugged
• Lead Free and Green .
