HY3008PM Datasheet, mosfet equivalent, HOOYI

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Part number:

HY3008PM

Manufacturer:

HOOYI

File Size:

1.59MB

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📄 Datasheet

Description:

N-channel enhancement mode mosfet.

TAGS

HY3008PM

HOOYI

📁 Related Datasheet

HY3008P - N-Channel Enhancement Mode MOSFET (HOOYI)
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HY3008PS - N-Channel Enhancement Mode MOSFET (HOOYI)
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HY3008B - N-Channel Enhancement Mode MOSFET (HOOYI)
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HY3008M - N-Channel Enhancement Mode MOSFET (HOOYI)
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HY3003 - N-Channel MOSFET (HOOYI)
HY3003P/B N-Channel Enhancement Mode MOSFET Features • 30V/100A RDS(ON)= 3.5mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Exce.

HY3003B - N-Channel MOSFET (HOOYI)
HY3003P/B N-Channel Enhancement Mode MOSFET Features • 30V/100A RDS(ON)= 3.5mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Exce.

HY3003P - N-Channel MOSFET (HOOYI)
HY3003P/B N-Channel Enhancement Mode MOSFET Features • 30V/100A RDS(ON)= 3.5mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Exce.

HY3007B - N-Channel Enhancement Mode MOSFET (HOOYI)
HY3007P/M/B/PS/PM Features • 68V / 120 A RDS(ON)= 5.0 m (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugged • Lead Free and Green .

HY3007M - N-Channel Enhancement Mode MOSFET (HOOYI)
HY3007P/M/B/PS/PM Features • 68V / 120 A RDS(ON)= 5.0 m (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugged • Lead Free and Green .

HY3007P - N-Channel Enhancement Mode MOSFET (HOOYI)
HY3007P/M/B/PS/PM Features • 68V / 120 A RDS(ON)= 5.0 m (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugged • Lead Free and Green .