HY0C20C - Dual N-Channel Enhancement Mode MOSFET

HUAYI

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Datasheet Details

Part number: HY0C20C
Manufacturer: HUAYI
File Size: 2.39 MB
Datasheet: HY0C20C-HUAYI.pdf
Description: Dual N-Channel Enhancement Mode MOSFET

HY0C20C Product details

Description

G2 S2 S2 D1/D2 G1 S1 S1 DFN6L(0203) Applications Battery pack protection Power tool , Cell phone G1 3 S1 2 S1 1 Bottom Drain Contact 4 G2 5 S2 6 S2 Dual N-Channel MOSFET Ordering and Marking Information C HY0C20 YYÿ XXXJWW C Package Code C : DFN6L(0203) Date Code YYXXX WW Assembly Material C : Green Device Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;which are fully compliant with RoHS.HU

Features

20V/ 12A RDS(ON)= 9 mΩ (typ. ) @ VGS=4.5 V RDS(ON)= 11.5 mΩ (typ. ) @ VGS=2.5 V.
High Cell Desity for low Rds(on).
ESD Rating:2000V HBM.
Halogen Device Available Pin.

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Dual N-Channel Enhancement Mode MOSFET HUAYI

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