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HYG022N03LQ1D Datasheet, Mosfet, HUAYI

✔ HYG022N03LQ1D Application

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Part number:

HYG022N03LQ1D

Manufacturer:

HUAYI

File Size:

933.22kb

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📄 Datasheet

Description:

N-channel mosfet. GDS GDS GDS TO-252-2L TO-251-3L TO-251-3S Applications z Switching Application z Power Management for DC/DC z Battery Protectio

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HYG022N03LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature z 30V/115A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.6mΩ(typ.) @VGS = 4.5V z 100% Avala.
HYG022N03LQ1V - N-Channel MOSFET (HUAYI)
HYG022N03LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature z 30V/115A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.6mΩ(typ.) @VGS = 4.5V z 100% Avala.
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HYG023N03LR1C2 Single N-Channel Enhancement Mode MOSFET Feature Description  30V/125A RDS(ON)= 1.5mΩ (typ.) @VGS = 10V RDS(ON)= 2.1mΩ (typ.) @VGS =.
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HYG025N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/150A RDS(ON)= 2.4mΩ(typ.)@VGS = 10V RDS(ON)= 4.2mΩ(typ.)@VGS = 4.5V  100% Avalanc.
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HYG025N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/150A RDS(ON)= 2.4mΩ(typ.)@VGS = 10V RDS(ON)= 4.2mΩ(typ.)@VGS = 4.5V  100% Avalanc.

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HYG022N03LQ1D N-Channel MOSFET HUAYI