Part number:
HYG022N03LQ1U
Manufacturer:
HUAYI
File Size:
933.22 KB
Description:
N-channel mosfet.
HYG022N03LQ1U Datasheet (933.22 KB)
HYG022N03LQ1U
HUAYI
933.22 KB
N-channel mosfet.
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N-Channel Enhancement Mode MOSFET
Feature
z 30V/115A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.6mΩ(typ.) @VGS = 4.5V
z 100% Avala.
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N-Channel Enhancement Mode MOSFET
Feature
z 30V/115A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.6mΩ(typ.) @VGS = 4.5V
z 100% Avala.
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Single N-Channel Enhancement Mode MOSFET
Feature Description
30V/125A RDS(ON)= 1.5mΩ (typ.) @VGS = 10V RDS(ON)= 2.1mΩ (typ.) @VGS =.
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N-Channel Enhancement Mode MOSFET
Feature
30V/110A RDS(ON)= 2.1mΩ(typ.)@VGS = 10V RDS(ON)= 2.7mΩ(typ.)@VGS = 4.5V
100% Avalanc.
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Feature
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100% Avalanc.
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Feature
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Feature
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100% Avalanc.
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