HYG068N08NR1P N-Channel Enhancement Mode MOSFET

HUAYI

Description

HYG068N08NR1P N-Channel Enhancement Mode MOSFET .
GDS TO-220FB-3L N-Channel MOSFET P G068N08N XXXYWXXXXX Package Code P: TO-220FB-3L Date Code XXXYWXXXXX Note: HUAYI lead-free products contain mold.

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Datasheet Specifications

Part number: HYG068N08NR1P
Manufacturer: HUAYI
File Size: 724.27 KB
Datasheet: HYG068N08NR1P-HUAYI.pdf
Description: N-Channel Enhancement Mode MOSFET

Applications

* Power management in Inverter System
* Electric vehicle controllers
* Lithium battery protection board

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HYG068N08NR1P N-Channel Enhancement Mode MOSFET HUAYI

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