HYG090ND06LS1C2 Dual N-Channel Enhancement Mode MOSFET

HUAYI

Description

HYG090ND06LS1C2 Dual N-Channel Enhancement Mode MOSFET .
PIN1 PDFN8L(5x6) Applications. Switching Application. Power Management for DC/DC Ordering and Marking Information C2 G090ND06 XXXYWXXXXX.

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Datasheet Specifications

Part number: HYG090ND06LS1C2
Manufacturer: HUAYI
File Size: 796.88 KB
Datasheet: HYG090ND06LS1C2-HUAYI.pdf
Description: Dual N-Channel Enhancement Mode MOSFET

Applications

* Switching Application
* Power Management for DC/DC Ordering and Marking Information C2 G090ND06 XXXYWXXXXX Dual N-Channel MOSFET Package Code C2: PDFN8L(5x6) Date Code XXXYWXXXXX Note:HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNa

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HYG090ND06LS1C2 Dual N-Channel Enhancement Mode MOSFET HUAYI

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