HGTG40N60B3 Datasheet, Igbt, Harris

HGTG40N60B3 Features

• Igbt
• 70A, 600V at TC = +25 C
• Square Switching SOA Capability
• Typical Fall Time - 160ns at +150oC
• Short Circuit Rating
• Low Conduction Loss o

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HGTG40N60B3

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Harris

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📄 Datasheet

Description:

Ufs series n-channel igbt. The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The devi

HGTG40N60B3 Application

• Applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and driv

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HGTG40N60B3

Harris

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