* of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications
HGTG40N60A4 Datasheet (181.07 KB)
HGTG40N60A4
Fairchild Semiconductor
181.07 KB
N-channel igbt.
HGTG40N60A4
Data Sheet August 2003 File Number
600V, SMPS Series N-Channel IGBT
The HGTG40N60A4 is a MOS gated high voltage switching device combinin.
📁 Related Datasheet
HGTG40N60A4 N-Channel IGBT (Intersil Corporation)
HGTG40N60B3 N-Channel IGBT (Fairchild Semiconductor)
HGTG40N60B3 N-Channel IGBT (Intersil Corporation)
HGTG40N60B3 N-Channel IGBT (ON Semiconductor)
HGTG40N60B3 UFS Series N-Channel IGBT (Harris)
HGTG40N60C3 N-Channel IGBT (Intersil Corporation)
HGTG40N60C3 UFS Series N-Channel IGBT (Fairchild Semiconductor)
HGTG10N120BN 35A/ 1200V/ NPT Series N-Channel IGBT (Fairchild Semiconductor)
HGTG10N120BN N-Channel IGBT (Intersil Corporation)
HGTG10N120BND N-Channel IGBT (Fairchild Semiconductor)
