HGTG12N60A4D Datasheet, Igbt, Intersil Corporation

✔ HGTG12N60A4D Features

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower o

operating at high frequencies where low conduction losses are essential. This device has been optimized for

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HGTG12N60A4D

Intersil Corporation

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N-channel igbt.

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IGBT 600V 54A TO-247-3

HGTG12N60A4D

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HGTG12N60A4D N-Channel IGBT Intersil Corporation