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HGTG12N60A4D Datasheet - Intersil Corporation

HGTG12N60A4D N-Channel IGBT

HGTG12N60A4D Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49335. The diode used

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Datasheet Details

Part number:

HGTG12N60A4D

Manufacturer:

Intersil Corporation

File Size:

394.54 KB

Description:

N-channel igbt.

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