* of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applicatio
HGTG40N60C3 Datasheet (79.20 KB)
HGTG40N60C3
Intersil Corporation
79.20 KB
N-channel igbt.
HGTG40N60C3
Data Sheet January 2000 File Number 4472.2
75A, 600V, UFS Series N-Channel IGBT
The HGTG40N60C3 is a MOS gated high voltage switching dev.
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