* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications ope
HGTG40N60B3 Datasheet (117.65 KB)
HGTG40N60B3
Fairchild Semiconductor
117.65 KB
N-channel igbt.
Data Sheet
HGTG40N60B3
November 2004
File Number
70A, 600V, UFS Series N-Channel IGBT
The HGTG40N60B3 is a MOS gated high voltage switching device.
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