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IRF223

N-Channel Power MOSFETs

IRF223 Features

* 4.0A and 5.0A, 150V and 200V

* rDS(ON) = 0.8Ω and 1.2Ω

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier Device

* Related Literature - TB334 “G

IRF223 General Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi.

IRF223 Datasheet (68.17 KB)

Preview of IRF223 PDF

Datasheet Details

Part number:

IRF223

Manufacturer:

Harris

File Size:

68.17 KB

Description:

N-channel power mosfets.

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TAGS

IRF223 N-Channel Power MOSFETs Harris

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