IRF223, IRF220 Datasheet - Harris

IRF223 N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi.

IRF223 Features

* 4.0A and 5.0A, 150V and 200V

* rDS(ON) = 0.8Ω and 1.2Ω

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier Device

* Related Literature - TB334 “G

IRF220-Harris.pdf

IRF223 Datasheet Preview — This datasheet PDF includes multiple part numbers: IRF223, IRF220. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IRF223, IRF220

Manufacturer:

Harris

File Size:

68.17 KB

Description:

N-channel power mosfets.

Note:

This datasheet PDF includes multiple part numbers: IRF223, IRF220.
Please refer to the document for exact specifications by model.

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TAGS

IRF223 IRF220 N-Channel Power MOSFETs Harris

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