HLB125HE Datasheet PDF - Hi-Sincerity Microelectronics NPN Epitaxial Planar Transistor Specs

HLB125HE - NPN Epitaxial Planar Transistor

This page provides the datasheet information for the HLB125HE, a member of the HLB125HE_Hi NPN Epitaxial Planar Transistor family.

Datasheet Summary

Description

The HLB125HE is designed for lighting applications and low switch-mode power supplies.

And it is high voltage capability and high switching speeds.

Features

High Speed Switching.
Low Saturation Voltage.
High Reliability TO-220 Absolute Maximum Ratings (TA=25°C).
Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature 150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TC=25°C) 75 W.
Maximum Voltages.

Datasheet Details

Part number	HLB125HE
Manufacturer	Hi-Sincerity Microelectronics
File Size	50.28 KB
Description	NPN Epitaxial Planar Transistor
Datasheet	HLB125HE Datasheet
Additional preview pages of the HLB125HE datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HLB125HE NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE200214 Issued Date : 2002.09.01 Revised Date : 2004.11.08 Page No. : 1/5 Description The HLB125HE is designed for lighting applications and low switch-mode power supplies. And it is high voltage capability and high switching speeds. Features • High Speed Switching • Low Saturation Voltage • High Reliability TO-220 Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature ........................................................................................................................... -50 ~ +150 °C Junction Temperature .....................................................................................................................

Published: Nov 29, 2005 |