* High Speed Switching
* Low Saturation Voltage
* High Reliability TO-220 Absolute Maximum Ratings (TA=25°C)
* Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature 150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (T
HLB125HE
Hi-Sincerity Microelectronics
50.28 KB
Npn epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. HLB125HE NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE200214 Issued Date : 2002.09.01 Revised Date : 2004.11.08 .
📁 Related Datasheet
HLB125E NPN Transistor (Hi-Sincerity Mocroelectronics)
HLB120A NPN Triple Diffused Planar Type High Voltage Transistors (Hi-Sincerity Mocroelectronics)
HLB121 NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR (UTC)
HLB121A NPN Triple Diffused Planar Type High Voltage Transistor (HI-SINCERITY)
HLB121I NPN Triple Diffused Planar Type High Voltage Transistor (Hi-Sincerity Mocroelectronics)
HLB121J NPN Transistor (Hi-Sincerity Mocroelectronics)
HLB122 NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR (UTC)
HLB122I NPN Transistor (Hi-Sincerity Mocroelectronics)
HLB122J NPN Transistor (Hi-Sincerity Mocroelectronics)
HLB122T NPN Transistor (Hi-Sincerity Mocroelectronics)
