HLB125HE, HLB125HE_Hi - NPN Epitaxial Planar Transistor

Hi-Sincerity Microelectronics

Datasheet Details

Part number	HLB125HE, HLB125HE_Hi
Manufacturer	Hi-Sincerity Microelectronics
File Size	50.28 KB
Description	NPN Epitaxial Planar Transistor
Datasheet	HLB125HE_Hi-SincerityMicroelectronics.pdf
Note	This datasheet PDF includes multiple part numbers: HLB125HE, HLB125HE_Hi. Please refer to the document for exact specifications by model.

The HLB125HE is designed for lighting applications and low switch-mode power supplies.

High Speed Switching.
Low Saturation Voltage.
High Reliability TO-220 Absolute Maximum Ratings (TA=25°C).
Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature 150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TC=25°C) 75 W.
Maximum Voltages.

📁 HLB125HE Similar Datasheet

HLB125E - NPN Transistor (Hi-Sincerity Mocroelectronics)
HLB120A - NPN Triple Diffused Planar Type High Voltage Transistors (Hi-Sincerity Mocroelectronics)
HLB121 - NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR (UTC)
HLB121A - NPN Triple Diffused Planar Type High Voltage Transistor (HI-SINCERITY)
HLB121I - NPN Triple Diffused Planar Type High Voltage Transistor (Hi-Sincerity Mocroelectronics)
HLB121J - NPN Transistor (Hi-Sincerity Mocroelectronics)
HLB122 - NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR (UTC)
HLB122I - NPN Transistor (Hi-Sincerity Mocroelectronics)

Other Datasheets by Hi-Sincerity Microelectronics

Published: Nov 29, 2005 |