* TO-220 Internal Schematic Diagram C
* High Speed Switching
* Low Saturation Voltage
* High Reliability Absolute Maximum Ratings B E
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C
* Maximum Power Dissipation Total Po
HLB125E
Hi-Sincerity Mocroelectronics
48.97 KB
Npn transistor.
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6703 Issued Date : 1992.11.25 Revised Date : 2004.11.03 Page No. : 1/5 HLB125E NPN EPITAXIAL PLANA.
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