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HLB121J - NPN Transistor

This page provides the datasheet information for the HLB121J, a member of the HLB121J_Hi NPN Transistor family.

Datasheet Summary

Description

The HLB121J is a medium power transistor designed for use in switching applications.

Features

  • High breakdown voltage.
  • Low collector saturation voltage.
  • Fast switching speed Absolute Maximum Ratings (Ta=25°C).
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C.
  • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 10 W.
  • Maximum Voltages and Currents BVCBO Collector to Base Voltage.

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Datasheet preview – HLB121J

Datasheet Details

Part number HLB121J
Manufacturer Hi-Sincerity Mocroelectronics
File Size 31.01 KB
Description NPN Transistor
Datasheet download datasheet HLB121J Datasheet
Additional preview pages of the HLB121J datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6027 Issued Date : 1996.11.11 Revised Date : 2001.05.01 Page No. : 1/3 HLB121J NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121J is a medium power transistor designed for use in switching applications. Features • High breakdown voltage • Low collector saturation voltage • Fast switching speed Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ............................................
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