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UTC HLB124
NPN EPITAXIAL SILICON TRANSISTOR
NPN EPITAXIAL PLANAR TRANSISTOR
DESCRIPTION
The UTC HLB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications.
1
FEATURES
* High Speed Switching * Low Saturation Voltage * High Reliability
TO-220
1: BASE
2: COLLECTOR
3: EMITTER
*Pb-free plating product number: HLB124L
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (PULSE) Base Current (DC) Base Current (PULSE) Total Power Dissipation (Tc=25℃) Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO www.DataSheet4U.