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UTC HLB122
NPN EPITAXIAL SILICON TRANSISTOR
NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR
DESCRIPTION
The UTC HLB122 is a medium power transistor designed for use in switching applications.
FEATURES
* High breakdown voltage * Low collector saturation voltage * Fast switching speed
1
TO-251
1: BASE
2: COLLECTOR
3: EMITTER
*Pb-free plating product number:HLB122L
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Base Current (Pulse) Total Power Dissipation (Tc=25℃) Junction Temperature Storage Temperature SYMBOL VCBO VCEO www.DataSheet4U.