HLB122
UTC
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Npn triple diffused planar type high voltage transistor. The UTC HLB122 is a medium power transistor designed for use in switching applications. FEATURES
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HLB120A - NPN Triple Diffused Planar Type High Voltage Transistors
(Hi-Sincerity Mocroelectronics)
HI-SINCERITY
MICROELECTRONICS CORP.
HLB120A
NPN Triple Diffused Planar Type High Voltage Transistors
Spec. No. : HE6412 Issued Date : 1998.12.01 Revi.
HLB121 - NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR
(UTC)
UTC HLB121
NPN EPITAXIAL SILICON TRANSISTOR
NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR
DESCRIPTION
The UTC HLB121 is a medium power tra.
HLB121A - NPN Triple Diffused Planar Type High Voltage Transistor
(HI-SINCERITY)
HI-SINCERITY
MICROELECTRONICS CORP.
HLB121A
NPN Triple Diffused Planar Type High Voltage Transistor
Spec. No. : HA200112 Issued Date : 2001.04.01 Rev.
HLB121I - NPN Triple Diffused Planar Type High Voltage Transistor
(Hi-Sincerity Mocroelectronics)
HI-SINCERITY
MICROELECTRONICS CORP.
HLB121I
NPN Triple Diffused Planar Type High Voltage Transistor
Spec. No. : HE9027 Issued Date : 1996.11.06 Revis.
HLB121J - NPN Transistor
(Hi-Sincerity Mocroelectronics)
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6027 Issued Date : 1996.11.11 Revised Date : 2001.05.01 Page No. : 1/3
HLB121J
NPN Triple Diffused.
HLB122I - NPN Transistor
(Hi-Sincerity Mocroelectronics)
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9030 Issued Date : 1998.07.01 Revised Date : 2006.02.20 Page No. : 1/5
HLB122I
NPN Triple Diffused.
HLB122J - NPN Transistor
(Hi-Sincerity Mocroelectronics)
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2002.05.08 Page No. : 1/4
HLB122J
NPN Triple Diffused.
HLB122T - NPN Transistor
(Hi-Sincerity Mocroelectronics)
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200208 Issued Date : 1998.07.01 Revised Date : 2006.02.20 Page No. : 1/4
HLB122T
NPN Triple Diffus.
HLB123D - NPN Transistor
(Hi-Sincerity Mocroelectronics)
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6603 Issued Date : 1993.03.15 Revised Date : 2006.02.20 Page No. : 1/5
HLB123D
NPN EPITAXIAL PLANA.
HLB123D - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High voltage ·High speed switching ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot v.