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HLB123D NPN Transistor

HLB123D Description

isc Silicon NPN Power Transistor .
High voltage. High speed switching. Low Saturation Voltage. 100% avalanche tested. Minimum Lot-to-Lot variations for robust devic.

HLB123D Applications

* The HLB123D is designed for high voltage,high speed switching inductive circuits and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCER Collector-Emitter Voltage RBE=150Ω 600 V VCEO Collector-Emitter Voltage 4

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Datasheet Details

Part number
HLB123D
Manufacturer
INCHANGE
File Size
203.63 KB
Datasheet
HLB123D-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE HLB123D-like datasheet