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HLB123I - NPN Transistor

This page provides the datasheet information for the HLB123I, a member of the HLB123I_Hi NPN Transistor family.

Datasheet Summary

Description

The HLB123I is designed for high voltage.

High speed switching inductive circuits and amplifier applications.

Features

  • High Speed Switching.
  • Low Saturation Voltage.
  • High Reliability TO-251 Absolute Maximum Ratings (TA=25°C).
  • Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TC=25°C) 20 W.
  • Maximum Voltages and Currents BVCBO Collector to Base.

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Datasheet preview – HLB123I

Datasheet Details

Part number HLB123I
Manufacturer Hi-Sincerity Mocroelectronics
File Size 52.81 KB
Description NPN Transistor
Datasheet download datasheet HLB123I Datasheet
Additional preview pages of the HLB123I datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HI200202 Issued Date : 2002.06.01 Revised Date : 2006.02.20 Page No. : 1/5 HLB123I NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB123I is designed for high voltage. High speed switching inductive circuits and amplifier applications. Features • High Speed Switching • Low Saturation Voltage • High Reliability TO-251 Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature ........................................................................................................................... -50 ~ +150 °C Junction Temperature ...................................................................................................................
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