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HBC817, HBC817_Hi - NPN EPITAXIAL PLANAR TRANSISTOR

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This datasheet PDF includes multiple part numbers: HBC817, HBC817_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number HBC817, HBC817_Hi
Manufacturer Hi-Sincerity Mocroelectronics
File Size 66.15 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBC817_Hi-SincerityMocroelectronics.pdf
Note This datasheet PDF includes multiple part numbers: HBC817, HBC817_Hi.
Please refer to the document for exact specifications by model.

HBC817 Product details

Description

The HBC817 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages. Maximum Temperatures Storage Temperature -55 to +150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW Maximum Voltages and Currents (TA=25°C) VCES Collector to Base Voltage

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