HBC817 Datasheet - Hi-Sincerity Mocroelectronics

NPN EPITAXIAL PLANAR TRANSISTOR

HBC817 General Description

The HBC817 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages. Absolute Maximum Ratings SOT-23 * Maximum Temperatures Storage Temperature -55 to +150 °C Junction Temperature +150 °C * Maximum Power Dissipation Total Po.

HBC817 Datasheet (66.15 KB)

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HBC817

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Hi-Sincerity Mocroelectronics

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66.15 KB

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Npn epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. HBC817 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6831 Issued Date : 1994.01.25 Revised Date : 2008.01.30 Page.

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HBC817 General Description

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