HBC848 Datasheet - Hi-Sincerity Mocroelectronics

NPN EPITAXIAL PLANAR TRANSISTOR

HBC848 General Description

The HBC848 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. Absolute Maximum Ratings SOT-23 * Maximum Temperatures Storage Temperature -55 to +150 °C Junction Temperature +150 °C * Maximum Power Dissipatio.

HBC848 Datasheet (66.76 KB)

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HBC848

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Hi-Sincerity Mocroelectronics

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66.76 KB

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Npn epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. HBC848 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6843 Issued Date : 1994.07.29 Revised Date : 2008.01.30 Page.

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HBC848 General Description

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