HBC857

PNP EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

HBC857 General Description

The HBC857 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. Absolute Maximum Ratings SOT-23

* Maximum Temperatures Storage Temperature -55 to +150 °C Junction Temperature +150 °C

* Maximum Power Dissipatio.

HBC857 Datasheet (38.45 KB)

HBC857 Datasheet Preview — Preview of HBC857 PDF

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Part number:

HBC857

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

38.45 KB

Description:

Pnp epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. HBC857 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6829 Issued Date : 1994.01.25 Revised Date : 2004.09.01 Page.

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HBC857 PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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HBC857 General Description

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