HBC847 Datasheet - Hi-Sincerity Mocroelectronics

NPN EPITAXIAL PLANAR TRANSISTOR

HBC847 General Description

The HBC847 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. Absolute Maximum Ratings SOT-23 * Maximum Temperatures Storage Temperature -55 to +150 °C Junction Temperature +150 °C * Maximum Power Dissipatio.

HBC847 Datasheet (38.74 KB)

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HBC847

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Hi-Sincerity Mocroelectronics

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38.74 KB

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Npn epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. HBC847 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6827 Issued Date : 1993.11.28 Revised Date : 2004.09.01 Page.

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