HBC856 Datasheet - Hi-Sincerity Mocroelectronics

PNP EPITAXIAL PLANAR TRANSISTOR

HBC856 General Description

The HBC856 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. Absolute Maximum Ratings SOT-23 * Maximum Temperatures Storage Temperature -55 to +150 °C Junction Temperature +150 °C * Maximum Power Dissipatio.

HBC856 Datasheet (38.17 KB)

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HBC856

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Hi-Sincerity Mocroelectronics

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38.17 KB

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Pnp epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. HBC856 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6832 Issued Date : 1994.02.03 Revised Date : 2004.09.01 Page.

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HBC856 General Description

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