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HBC858, HBC858_Hi - PNP EPITAXIAL PLANAR TRANSISTOR

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This datasheet PDF includes multiple part numbers: HBC858, HBC858_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number HBC858, HBC858_Hi
Manufacturer Hi-Sincerity Mocroelectronics
File Size 38.98 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBC858_Hi-SincerityMocroelectronics.pdf
Note This datasheet PDF includes multiple part numbers: HBC858, HBC858_Hi.
Please refer to the document for exact specifications by model.

HBC858 Product details

Description

The HBC858 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage

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