HSB857

PNP EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

HSB857 General Description

Low frequency power amplifier. Absolute Maximum Ratings (TA=25°C) TO-220

* Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum

* Maximum Power Dissipation Total Power Dissipation (TC=25°C) 40 W

* Maximum Voltages and Currents BVC.

HSB857 Datasheet (40.02 KB)

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HSB857

Manufacturer:

Hi-Sincerity Mocroelectronics

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40.02 KB

Description:

Pnp epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. HSB857 / 2SB857 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6705 Issued Date : 1995.01.27 Revised Date : 2005.1.

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HSB857 PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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HSB857 General Description

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