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HSB857 - PNP EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HSB857, a member of the HSB857_Hi PNP EPITAXIAL PLANAR TRANSISTOR family.

Datasheet Summary

Description

Low frequency power amplifier.

Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TC=25°C) 40 W Maximum Voltages and Currents BVC

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Datasheet preview – HSB857

Datasheet Details

Part number HSB857
Manufacturer Hi-Sincerity Mocroelectronics
File Size 40.02 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HSB857 Datasheet
Additional preview pages of the HSB857 datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HSB857 / 2SB857 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6705 Issued Date : 1995.01.27 Revised Date : 2005.10.07 Page No. : 1/4 Description Low frequency power amplifier. Absolute Maximum Ratings (TA=25°C) TO-220 • Maximum Temperatures Storage Temperature ........................................................................................................................... -50 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TC=25°C) ....................................................................................................................
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