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HSB857 Datasheet - Hi-Sincerity Mocroelectronics

HSB857 PNP EPITAXIAL PLANAR TRANSISTOR

Low frequency power amplifier. Absolute Maximum Ratings (TA=25°C) TO-220 * Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum * Maximum Power Dissipation Total Power Dissipation (TC=25°C) 40 W * Maximum Voltages and Currents BVC.

HSB857 Datasheet (40.02 KB)

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Datasheet Details

Part number:

HSB857

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

40.02 KB

Description:

Pnp epitaxial planar transistor.

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HSB857 PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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