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HSB857D - PNP EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HSB857D, a member of the HSB857D_Hi PNP EPITAXIAL PLANAR TRANSISTOR family.

Datasheet Summary

Description

Low frequency power amplifier.

Spec.

No.

Maximum Temperatures Storage Temperature -50~+150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipatio

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Datasheet preview – HSB857D

Datasheet Details

Part number HSB857D
Manufacturer Hi-Sincerity Mocroelectronics
File Size 33.86 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HSB857D Datasheet
Additional preview pages of the HSB857D datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HSB857D PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. Spec. No. : HE6705 Issued Date : 1995.01.27 Revised Date : 2002.03.06 Page No. : 1/4 Absolute Maximum Ratings (Ta=25°C) TO-126ML • Maximum Temperatures Storage Temperature .............................................................................................. -50~+150 °C Junction Temperature .................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C).....................................................................................1.5 W Total Power Dissipation (Tc=25°C) ......................................................................................
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