* High fT: 500MHz
* High breakdown voltage: VCEO=120V min
* Small reverse transfer capacitance TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum
* Maximum Power Dissipation Total Pow
HSC3953S
Hi-Sincerity Mocroelectronics
46.22 KB
Npn epitaxial planar transistor.
HI-SINCERITY
MICROELECTRONICS CORP.
HSC3953S
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6502 Issued Date : 1992.08.25 Revised Date : 2005.02.15 Pa.
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