HSC1959SP, HSC1959SP_Hi Datasheet - Hi-Sincerity Mocroelectronics

HSC1959SP - NPN EPITAXIAL PLANAR TRANSISTOR

HSC1959SP Features

* Execellent hFE linearity

* Complementary to HSA562 Absolute Maximum Ratings

* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum

* Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 500 mW

* Maximum Voltag

Datasheet Details

HSC1959SP, HSC1959SP_Hi

Hi-Sincerity Mocroelectronics

27.21 KB

Npn epitaxial planar transistor.

This datasheet PDF includes multiple part numbers: HSC1959SP, HSC1959SP_Hi.
Please refer to the document for exact specifications by model.

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