* Execellent hFE linearity
* Complementary to HSA562 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 500 mW
* Maximum Voltag
HSC1959SP Datasheet (27.21 KB)
HSC1959SP
Hi-Sincerity Mocroelectronics
27.21 KB
Npn epitaxial planar transistor.
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HSP200203 Issued Date : 1998.01.06 Revised Date : 2002.03.04 Page No. : 1/3
HSC1959SP
NPN EPITAXIAL .
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