HSC1959SP Datasheet - Hi-Sincerity Mocroelectronics

HSC1959SP NPN EPITAXIAL PLANAR TRANSISTOR

HSC1959SP Features

* Execellent hFE linearity

* Complementary to HSA562 Absolute Maximum Ratings

* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum

* Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 500 mW

* Maximum Voltag

Datasheet Details

HSC1959SP

Hi-Sincerity Mocroelectronics

27.21 KB

Npn epitaxial planar transistor.

📁 Related Datasheet

HSC1959 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

HSC100 Aluminium Housed Power Resistors (TE)

HSC106D Silicon Controlled Rectifier (SemiHow)

HSC106M Silicon Controlled Rectifier (SemiHow)

HSC119 Silicon Epitaxial Planar Diode for High Speed Switching (Hitachi Semiconductor)

HSC150 Aluminium Housed Power Resistors (TE)

HSC1815 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

HSC200 Aluminium Housed Power Resistors (TE)

HSC2228Y NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

HSC2240 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

TAGS

Image Gallery

HSC1959SP Distributor