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HSC1959SP, HSC1959SP_Hi - NPN EPITAXIAL PLANAR TRANSISTOR

HSC1959SP Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HSP200203 Issued Date : 1998.01.06 Revised Date : 2002.03.04 Page No.: 1/3 HSC1959SP NPN EPITAXIAL .
The HSC1959Y is designed for audio frequency Low power amplifier applications. Execellent hFE linearity. Complementary to.

HSC1959SP Features

* Execellent hFE linearity
* Complementary to HSA562 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 500 mW
* Maximum Voltag

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This datasheet PDF includes multiple part numbers: HSC1959SP, HSC1959SP_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HSC1959SP, HSC1959SP_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
27.21 KB
Datasheet
HSC1959SP_Hi-SincerityMocroelectronics.pdf
Description
NPN EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HSC1959SP, HSC1959SP_Hi.
Please refer to the document for exact specifications by model.

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NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HSC1959SP-like datasheet

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