HSC1959SP - NPN EPITAXIAL PLANAR TRANSISTOR
HSC1959SP Features
* Execellent hFE linearity
* Complementary to HSA562 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 500 mW
* Maximum Voltag