HSC1959 Features
* Excellent hFE Linearity TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 500 mW
* Maximum Voltages and Currents (TA=25°C) VC
HSC1959_Hi-SincerityMocroelectronics.pdf
Datasheet Details
HSC1959, HSC1959_Hi
Hi-Sincerity Mocroelectronics
51.98 KB
Npn epitaxial planar transistor.
This datasheet PDF includes multiple part numbers: HSC1959, HSC1959_Hi.
Please refer to the document for exact specifications by model.
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