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HSC1959 Datasheet - Hi-Sincerity Mocroelectronics

HSC1959 NPN EPITAXIAL PLANAR TRANSISTOR

HSC1959 Features

* Excellent hFE Linearity TO-92 Absolute Maximum Ratings

* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum

* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 500 mW

* Maximum Voltages and Currents (TA=25°C) VC

HSC1959 Datasheet (51.98 KB)

Preview of HSC1959 PDF

Datasheet Details

Part number:

HSC1959

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

51.98 KB

Description:

Npn epitaxial planar transistor.

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