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HSC1959, HSC1959_Hi - NPN EPITAXIAL PLANAR TRANSISTOR

HSC1959 Description

HI-SINCERITY MICROELECTRONICS CORP.HSC1959 NPN EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6524 Issued Date : 1993.01.15 Revised Date : 2005.02.14 Pag.
The HSC1959 is designed for audio frequency Low power amplifier applications. Excellent hFE Linearity TO-92 Absolute Maximum Rat.

HSC1959 Features

* Excellent hFE Linearity TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 500 mW
* Maximum Voltages and Currents (TA=25°C) VC

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HSC1959, HSC1959_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HSC1959, HSC1959_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
51.98 KB
Datasheet
HSC1959_Hi-SincerityMocroelectronics.pdf
Description
NPN EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HSC1959, HSC1959_Hi.
Please refer to the document for exact specifications by model.

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NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HSC1959-like datasheet

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