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H2N6668, H2N6668_Hi - PNP EPITAXIAL PLANAR TRANSISTOR

H2N6668 Description

HI-SINCERITY MICROELECTRONICS CORP.H2N6668 PNP EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6754 Issued Date : 1998.07.01 Revised Date : 2004.11.03 Pag.
The H2N6668 is designed for general-purpose amplifier and switching applications. Maximum Temp.

H2N6668 Applications

* Absolute Maximum Ratings (TA=25°C) TO-220
* Maximum Temperatures Storage Temperature -55~+150°C Junction Temperature +150°C Maximum
* Maximum Power Dissipation Total Power Dissipation (TC=25°C) 65 W
* Maximum Voltages and Currents BVCBO Collector to Base Voltage

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This datasheet PDF includes multiple part numbers: H2N6668, H2N6668_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
H2N6668, H2N6668_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
40.44 KB
Datasheet
H2N6668_Hi-SincerityMocroelectronics.pdf
Description
PNP EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: H2N6668, H2N6668_Hi.
Please refer to the document for exact specifications by model.

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PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics H2N6668-like datasheet