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HSB857, HSB857_Hi - PNP EPITAXIAL PLANAR TRANSISTOR

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This datasheet PDF includes multiple part numbers: HSB857, HSB857_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HSB857, HSB857_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
40.02 KB
Datasheet
HSB857_Hi-SincerityMocroelectronics.pdf
Description
PNP EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HSB857, HSB857_Hi.
Please refer to the document for exact specifications by model.

HSB857 Product details

Description

Low frequency power amplifier. Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TC=25°C) 40 W Maximum Voltages and Currents BVCBO Collector to Base Voltage -70 V BVCEO Collector to Emi

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PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HSB857-like datasheet

HSB857 Stock/Price