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HSB857D, HSB857D_Hi - PNP EPITAXIAL PLANAR TRANSISTOR

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This datasheet PDF includes multiple part numbers: HSB857D, HSB857D_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HSB857D, HSB857D_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
33.86 KB
Datasheet
HSB857D_Hi-SincerityMocroelectronics.pdf
Description
PNP EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HSB857D, HSB857D_Hi.
Please refer to the document for exact specifications by model.

HSB857D Product details

Description

Low frequency power amplifier. Maximum Temperatures Storage Temperature -50~+150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C)1.5 W Total Power Dissipation (Tc=25°C) 10 W Maximum Voltages and Currents BVCBO Collector to Base Voltage-60 V BVCEO Collector to Emitter Volta

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PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HSB857D-like datasheet

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