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2SJ361 Datasheet - Hitachi Semiconductor

2SJ361 P-Channel MOSFET

2SJ361 Features

* Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Outline UPAK 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 G 2SJ361 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to

2SJ361 Datasheet (43.09 KB)

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Datasheet Details

Part number:

2SJ361

Manufacturer:

Hitachi Semiconductor

File Size:

43.09 KB

Description:

P-channel mosfet.

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2SJ361 P-Channel MOSFET Hitachi Semiconductor

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