Datasheet Specifications
- Part number
- 2SJ361
- Manufacturer
- Hitachi Semiconductor
- File Size
- 43.09 KB
- Datasheet
- 2SJ361_HitachiSemiconductor.pdf
- Description
- P-Channel MOSFET
Description
2SJ361 Silicon P-Channel MOS FET Application High speed power switching .
Features
* Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Outline UPAK 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 G 2SJ361 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to2SJ361 Distributors
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