Datasheet Details
- Part number
- 2SJ361
- Manufacturer
- Hitachi Semiconductor
- File Size
- 43.09 KB
- Datasheet
- 2SJ361_HitachiSemiconductor.pdf
- Description
- P-Channel MOSFET
2SJ361 Description
2SJ361 Silicon P-Channel MOS FET Application High speed power switching .
2SJ361 Features
* Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source
Outline
UPAK 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain S
3
G
2SJ361
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to
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