Datasheet4U Logo Datasheet4U.com

2SJ361 - P-Channel MOSFET

2SJ361 Description

2SJ361 Silicon P-Channel MOS FET Application High speed power switching .

2SJ361 Features

* Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Outline UPAK 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 G 2SJ361 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to

📥 Download Datasheet

Preview of 2SJ361 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
2SJ361
Manufacturer
Hitachi Semiconductor
File Size
43.09 KB
Datasheet
2SJ361_HitachiSemiconductor.pdf
Description
P-Channel MOSFET

📁 Related Datasheet

  • 2SJ360 - P-Channel MOSFET (Toshiba Semiconductor)
  • 2SJ362 - P-Channel MOSFET (Sanyo Semicon Device)
  • 2SJ364 - P-Channel MOSFET (Panasonic Semiconductor)
  • 2SJ302 - P-Channel MOSFET (NEC)
  • 2SJ302-Z - SWITCHING P-CHANNEL POWER MOSFET (NEC)
  • 2SJ302-ZJ - P-Channel MOSFET (Kexin)
  • 2SJ303 - P-Channel MOSFET (NEC)
  • 2SJ304 - P-Channel MOSFET (Toshiba Semiconductor)

📌 All Tags

P-Channel MOSFET Hitachi Semiconductor
Hitachi Semiconductor 2SJ361-like datasheet