2SJ360
Toshiba ↗ Semiconductor
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P-channel mosfet.
2SJ360
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2
*π
*MOSV)
2SJ360
High Speed, High current Switching Applications
.
📁 Related Datasheet
2SJ360 - MOSFET
(Guangdong Kexin Industrial)
..net
SMD Type
MOS Field Effect Transistors 2SJ360
SOT-89
+0.1 4.50-0.1 +0.1 1.80-0.1
MOSFET
Unit: mm
+0.1 1.50-0.1
Features
+0.1 2..
2SJ361 - P-Channel MOSFET
(Hitachi Semiconductor)
2SJ361
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• • • • Low on-resistance High speed switching Low drive current 2..
2SJ362 - P-Channel MOSFET
(Sanyo Semicon Device)
Ordering number:EN4918
Features
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.
P-Channel Silicon MOSFET
2SJ362
Ultrahigh-Spee.
2SJ363 - P-Channel MOSFET
(Hitachi Semiconductor)
2SJ363
Silicon P-Channel MOS FET
Application
Low frequency power switching
Features
• Low on-resistance • Low drive current • 4 V gate drive device .
2SJ364 - P-Channel MOSFET
(Panasonic Semiconductor)
Silicon Junction FETs (Small Signal)
2SJ364
Silicon P-Channel Junction FET
For analog switch
unit: mm
2.1±0.1
s Features
0.65
0.425
1.25±0.1
0.42.
2SJ302 - P-Channel MOSFET
(NEC)
.
2SJ302-Z - SWITCHING P-CHANNEL POWER MOSFET
(NEC)
.
2SJ302-ZJ - P-Channel MOSFET
(Kexin)
SMD Type
P-Channel MOSFET 2SJ302-ZJ
■ Features
● VDS (V) =-60V ● ID =-16 A ● RDS(ON) ＜ 100mΩ (VGS =-10V) ● RDS(ON) ＜ 240mΩ (VGS =-4V)
MOSFET
■ Abs.
