Datasheet4U Logo Datasheet4U.com

2SJ360 Datasheet - Toshiba Semiconductor

2SJ360 P-Channel MOSFET

2SJ360 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2 π MOSV) 2SJ360 High Speed, High current Switching Applications Chopper Regulator, DC DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain source ON resistance : RDS (ON) = 0.55 Ω (typ.) z High forward transfer admittance : |Yfs| = 0.9 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) z Enhancement mode : Vth = 0.8 to .

2SJ360 Datasheet (227.99 KB)

Preview of 2SJ360 PDF

Datasheet Details

Part number:

2SJ360

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

227.99 KB

Description:

P-channel mosfet.

📁 Related Datasheet

2SJ360 MOSFET (Guangdong Kexin Industrial)

2SJ361 P-Channel MOSFET (Hitachi Semiconductor)

2SJ362 P-Channel MOSFET (Sanyo Semicon Device)

2SJ363 P-Channel MOSFET (Hitachi Semiconductor)

2SJ364 P-Channel MOSFET (Panasonic Semiconductor)

2SJ302 P-Channel MOSFET (NEC)

2SJ302-Z SWITCHING P-CHANNEL POWER MOSFET (NEC)

2SJ302-ZJ P-Channel MOSFET (Kexin)

2SJ303 P-Channel MOSFET (NEC)

2SJ304 P-Channel MOSFET (Toshiba Semiconductor)

TAGS

2SJ360 P-Channel MOSFET Toshiba Semiconductor

Image Gallery

2SJ360 Datasheet Preview Page 2 2SJ360 Datasheet Preview Page 3

2SJ360 Distributor