2SK2684 - Silicon N Channel DV-L MOS FET
2SK2684 Features
* Low on-resistance R DS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A)
* 4V gate drive devices.
* High speed switching Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK2684(L), 2SK2684(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source
