2SK2684S - Silicon N Channel DV-L MOS FET

Hitachi Semiconductor

Datasheet Details

Part number	2SK2684S
Manufacturer	Hitachi Semiconductor
File Size	51.02 KB
Description	Silicon N Channel DV-L MOS FET
Datasheet	2SK2684S_HitachiSemiconductor.pdf

Low on-resistance R DS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A).
4V gate drive devices.
High speed switching Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK2684(L), 2SK2684(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle.

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Published: Mar 30, 2005 |