2SK2684S Silicon N Channel DV-L MOS FET

Hitachi Semiconductor

Description

2SK2684(L), 2SK2684(S) Silicon N Channel DV *L MOS FET High Speed Power Switching ADE-208-542 1st.Edition .

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Datasheet Specifications

Part number: 2SK2684S
Manufacturer: Hitachi Semiconductor
File Size: 51.02 KB
Datasheet: 2SK2684S_HitachiSemiconductor.pdf
Description: Silicon N Channel DV-L MOS FET

Features

* Low on-resistance R DS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A)
* 4V gate drive devices.
* High speed switching Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK2684(L), 2SK2684(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source

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Silicon Channel DV-L MOS FET Hitachi Semiconductor

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