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2SK2685 GaAs HEMT

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Description

2SK2685 GaAs HEMT ADE-208-400 1st.Edition Application UHF low noise amplifier .

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Datasheet Specifications

Part number
2SK2685
Manufacturer
Hitachi Semiconductor
File Size
49.79 KB
Datasheet
2SK2685_HitachiSemiconductor.pdf
Description
GaAs HEMT

Features

* Excellent low noise characteristics. Fmin = 0.83 dB Typ. (3 V, 10 mA, 2 GHz)
* High associated gain. Ga = 17 dB Typ. (3 V, 10 mA, 2 GHz)
* High voltage. VDS = 6 or more voltage.
* Small package. (CMPAK-4) Outline CMPAK
* 4 2 3 4 1 1. Source 2. Gate 3. Source

2SK2685 Distributors

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GaAs HEMT Hitachi Semiconductor
Hitachi Semiconductor 2SK2685-like datasheet