Datasheet4U.com

2SK2685 - GaAs HEMT

Hitachi Semiconductor

📥 Download Datasheet

2SK2685 Datasheet Preview — Preview of 2SK2685 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	2SK2685
Manufacturer	Hitachi Semiconductor
File Size	49.79 KB
Description	GaAs HEMT
Datasheet	2SK2685_HitachiSemiconductor.pdf

2SK2685 Product details

Features

Excellent low noise characteristics. Fmin = 0.83 dB Typ. (3 V, 10 mA, 2 GHz).
High associated gain. Ga = 17 dB Typ. (3 V, 10 mA, 2 GHz).
High voltage. VDS = 6 or more voltage.
Small package. (CMPAK-4) Outline CMPAK.
4 2 3 4 1 1. Source 2. Gate 3. Source 4. Drain 2SK2685 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Gate to drain voltage Drain current Channel power dissipation Channel temperature Storage te.

📁 2SK2685 Similar Datasheet

2SK2682LS - N-Channel Silicon MOSFET (Sanyo Semicon Device)
2SK2687-01 - N-Channel Silicon Power MOSFET (Fuji Electric)
2SK2688-01 - N-channel MOS-FET (Fuji Electric)
2SK2689-01MR - N-channel MOS-FET (Fuji Electric)
2SK260 - N-Channel MOSFET Transistor (Inchange Semiconductor)
2SK2601 - N-Channel MOSFET (Toshiba Semiconductor)
2SK2602 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
2SK2603 - Silicon N-Channel MOSFET (Toshiba Semiconductor)

Other Datasheets by Hitachi Semiconductor

2SK2684 - Silicon N Channel DV-L MOS FET
2SK2684L - Silicon N Channel DV-L MOS FET
2SK2684S - Silicon N Channel DV-L MOS FET
2SK2007 - Silicon N-Channel MOS FET
2SK2008 - Silicon N-Channel MOS FET
2SK2059 - Silicon N-Channel MOSFET

Published: Mar 30, 2005 |