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HSC277 - Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch

Datasheet Summary

Features

  • Low forward resistance. (rf = 0.7 max).
  • Ultra small F lat P ackage (UFP) is suitable for surface mount design. Ordering Information Type No. HSC277 Cathode Mark Laser Package Code UFP Outline Cathode mark 1 2 1. Cathode 2. Anode Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Junction temperature Power dissipation Operation temperature Storage temperature Symbol VR Tj Pd Topr Tstg Value 35 125 150.
  • 20 to +60.
  • 45 to +125 Unit V °C mW °C °C HSC277.

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Datasheet Details

Part number HSC277
Manufacturer Hitachi Semiconductor
File Size 26.66 KB
Description Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch
Datasheet download datasheet HSC277 Datasheet
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Full PDF Text Transcription

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HSC277 Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch ADE-208-413 (Z) Rev. 0 Dec. 1995 Features • Low forward resistance. (rf = 0.7 max) • Ultra small F lat P ackage (UFP) is suitable for surface mount design. Ordering Information Type No. HSC277 Cathode Mark Laser Package Code UFP Outline Cathode mark 1 2 1. Cathode 2. Anode Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Junction temperature Power dissipation Operation temperature Storage temperature Symbol VR Tj Pd Topr Tstg Value 35 125 150 –20 to +60 –45 to +125 Unit V °C mW °C °C HSC277 Electrical Characteristics (Ta = 25°C) Item Reverse voltage Reverse current Forward voltage Capacitance Forward resistance Symbol VR IR VF C rf Min 35 — — — — Typ — — — — — Max — 50 1.0 1.2 0.
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