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HSC278 - Silicon Schottky Barrier Diode

Datasheet Summary

Features

  • Low forward voltage, Low capacitance.
  • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HSC278 Laser Mark S6 Package Code UFP Pin Arrangement Cathode mark Mark 1 S6 2 1. Cathode 2. Anode HSC278 Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Reverse voltage Non-Repetitive peak forward surge current Peak forward current Average rectified current Junction temperature Storage temperature Note: 10 mse.

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Datasheet Details

Part number HSC278
Manufacturer Hitachi Semiconductor
File Size 71.61 KB
Description Silicon Schottky Barrier Diode
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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
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