HSC278 Datasheet - Hitachi Semiconductor

HSC278 Silicon Schottky Barrier Diode

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other H.

HSC278 Features

* Low forward voltage, Low capacitance.

* Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HSC278 Laser Mark S6 Package Code UFP Pin Arrangement Cathode mark Mark 1 S6 2 1. Cathode 2. Anode HSC278 Absolute Maximum Ratings (Ta = 2

HSC278_HitachiSemiconductor.pdf