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2SK3209 - N-Channel MOSFET

2SK3209 Description

2SK3209 Silicon N Channel MOS FET High Speed Power Switching ADE-208-759(Z) Target Specification 1st.Edition December 1998 .

2SK3209 Features

* Low on-resistance R DS =35mΩ typ.
* High speed switching
* 4V gate drive device can be driven from 5V source Outline TO
* 220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SK3209 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltag

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Datasheet Details

Part number
2SK3209
Manufacturer
Hitachi Semiconductor
File Size
26.42 KB
Datasheet
2SK3209_HitachiSemiconductor.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET Hitachi Semiconductor
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