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CS3710B8 Datasheet - Huajing Microelectronics

CS3710B8 Silicon N-Channel Power MOSFET

CS3710 B8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system .

CS3710B8 Features

* Fast Switching

* Low ON Resistance(Rdson≤23 mΩ)

* Low Gate Charge

* Low Reverse transfer capacitances

* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. 100 V 80 A 250 W 14 mΩ Absolute（Tj= 25℃ unless otherwise specified） S

CS3710B8-HuajingDiscreteDevices.pdf

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Datasheet Details

Part number:

CS3710B8

Manufacturer:

Huajing Microelectronics

File Size:

846.36 KB

Description:

Silicon n-channel power mosfet.

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