CS3710B8 Silicon N-Channel Power MOSFET

Huajing Microelectronics

Description

Silicon N-Channel Power MOSFET ○R CS3710 B8 General .
CS3710 B8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve swit.

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Datasheet Specifications

Part number: CS3710B8
Manufacturer: Huajing Microelectronics
File Size: 846.36 KB
Datasheet: CS3710B8-HuajingDiscreteDevices.pdf
Description: Silicon N-Channel Power MOSFET

Features

* Fast Switching
* Low ON Resistance(Rdson≤23 mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances

Applications

* Power switch circuit of adaptor and charger. 100 V 80 A 250 W 14 mΩ Absolute（Tj= 25℃ unless otherwise specified） Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25

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CS3710B8 Silicon N-Channel Power MOSFET Huajing Microelectronics

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