CS6N70FA9D Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS6N70FA9D Description

Huajing Discrete Devices Silicon N-Channel Power MOSFET ○R CS6N70F A9D General .
CS6N70F A9D the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve.

CS6N70FA9D Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD VESD(G-S) TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-

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Datasheet Details

Part number: CS6N70FA9D
Manufacturer: Huajing Microelectronics
File Size: 232.81 KB
Datasheet: CS6N70FA9D-HuajingMicroelectronics.pdf
Description: Silicon N-Channel Power MOSFET

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Silicon N-Channel Power MOSFET Huajing Microelectronics

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