CS6N70FA9D Datasheet - Huajing Microelectronics

Silicon N-Channel Power MOSFET

CS6N70FA9D Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:21nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VD

CS6N70FA9D General Description

CS6N70F A9D the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for systemminiaturization and .

CS6N70FA9D Datasheet (232.81 KB)

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Part number:

CS6N70FA9D

Manufacturer:

Huajing Microelectronics

File Size:

232.81 KB

Description:

Silicon n-channel power mosfet.

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CS6N70FA9D Features

CS6N70FA9D General Description

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