CS6N70A4D-G Datasheet, Mosfet, Huajing Microelectronics

✔ CS6N70A4D-G Features

Fast Switching
ESD Improved Capability
Low Gate Charge (Typical Data:15.5nC)
Low Reverse transfer capacitances(Typical:6pF)
100% Single Pulse avalanche en

✔ CS6N70A4D-G Application

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Paramet

PDF File Details

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Part number:

CS6N70A4D-G

Manufacturer:

Huajing Microelectronics

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550.38 KB

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📄 Datasheet

Description:

Silicon n-channel power mosfet. CS6N70 A4D-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduc

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CS6N70A4D-G Silicon N-Channel Power MOSFET Huajing Microelectronics