CS6N70A4D-G Silicon N-Channel Power MOSFET

Huajing Microelectronics

Description

Silicon N-Channel Power MOSFET ○R CS6N70 A4D-G General .
CS6N70 A4D-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improv.

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Datasheet Specifications

Part number: CS6N70A4D-G
Manufacturer: Huajing Microelectronics
File Size: 550.38 KB
Datasheet: CS6N70A4D-G-HuajingMicroelectronics.pdf
Description: Silicon N-Channel Power MOSFET

Features

* Fast Switching
* ESD Improved Capability
* Low Gate Charge (Typical Data:15.5nC)
* Low Reverse transfer capacitances(Typical:6pF)

Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD VESD(G-S) TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage

CS6N70A4D-G Distributors

📁 Related Datasheet

CS6N70A4R-G CS6N70A3R-G CS6N120A0R-G CS6N120A8R-G CS6N120AHR-G CS6N120AKR-G

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CS6N70A4D-G Silicon N-Channel Power MOSFET Huajing Microelectronics

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