Part number:
CS6N70A4D-G
Manufacturer:
Huajing Microelectronics
File Size:
550.38 KB
Description:
Silicon n-channel power mosfet.
CS6N70A4D-G-HuajingMicroelectronics.pdf
Datasheet Details
CS6N70 A4D-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization
CS6N70A4D-G Features
* Fast Switching
* ESD Improved Capability
* Low Gate Charge (Typical Data:15.5nC)
* Low Reverse transfer capacitances(Typical:6pF)
* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specif
CS6N70A4D-G-HuajingMicroelectronics.pdf
Datasheet Details
CS6N70A4D-G
Huajing Microelectronics
550.38 KB
Silicon n-channel power mosfet.
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