CS6N70A4D-G Datasheet - Huajing Microelectronics

CS6N70A4D-G Silicon N-Channel Power MOSFET

CS6N70 A4D-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization .

CS6N70A4D-G Features

* Fast Switching

* ESD Improved Capability

* Low Gate Charge (Typical Data:15.5nC)

* Low Reverse transfer capacitances(Typical:6pF)

* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specif

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