CS6N70A8D

Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS6N70A8D Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:21nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VD

CS6N70A8D General Description

CS6N70 A8D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and.

CS6N70A8D Datasheet (233.55 KB)

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Part number:

CS6N70A8D

Manufacturer:

Huajing Microelectronics

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233.55 KB

Description:

Silicon n-channel power mosfet.

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CS6N70A8D Features

CS6N70A8D General Description

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