CS6N70CRHD Datasheet, Mosfet, Huajing Microelectronics

✔ CS6N70CRHD Features

l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:15.5nC) l Low Reverse transfer capacitances(Typical:6pF) l 100% Single Pulse avalanche energy

✔ CS6N70CRHD Application

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Paramet

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Part number:

CS6N70CRHD

Manufacturer:

Huajing Microelectronics

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225.41 KB

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📄 Datasheet

Description:

Silicon n-channel power mosfet. CS6N70 CRHD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduct

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CS6N70CRHD Silicon N-Channel Power MOSFET Huajing Microelectronics