Part number:
CS6N70CRHD
Manufacturer:
Huajing Microelectronics
File Size:
225.41 KB
Description:
Silicon n-channel power mosfet.
CS6N70CRHD-HuajingDiscreteDevices.pdf
Datasheet Details
CS6N70 CRHD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization a
CS6N70CRHD Features
* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:15.5nC) l Low Reverse transfer capacitances(Typical:6pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter
CS6N70CRHD-HuajingDiscreteDevices.pdf
Datasheet Details
CS6N70CRHD
Huajing Microelectronics
225.41 KB
Silicon n-channel power mosfet.
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