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CS6N70CRHD Datasheet - Huajing Microelectronics

CS6N70CRHD - Silicon N-Channel Power MOSFET

CS6N70 CRHD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization a

CS6N70CRHD Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:15.5nC) l Low Reverse transfer capacitances(Typical:6pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter

CS6N70CRHD-HuajingDiscreteDevices.pdf

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Datasheet Details

Part number:

CS6N70CRHD

Manufacturer:

Huajing Microelectronics

File Size:

225.41 KB

Description:

Silicon n-channel power mosfet.

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