CS6N70B3D1-G Datasheet - Huajing Microelectronics

CS6N70B3D1-G Silicon N-Channel Power MOSFET

CS6N70 B3D1-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization.

CS6N70B3D1-G Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:8.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter

CS6N70B3D1-G-HuajingMicroelectronics.pdf