Part number:
CS6N70A3H
Manufacturer:
Huajing Microelectronics
File Size:
727.32 KB
Description:
Silicon n-channel power mosfet.
CS6N70A3H-HuajingDiscreteDevices.pdf
Datasheet Details
CS6N70 A3H,the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and
CS6N70A3H Features
* l Fast Switching l Low ON Resistance(Rdson≤2.2Ω) l Low Gate Charge (Typical Data:18.6nC) l Low Reverse transfer capacitances(Typical:6.6pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Par
CS6N70A3H-HuajingDiscreteDevices.pdf
Datasheet Details
CS6N70A3H
Huajing Microelectronics
727.32 KB
Silicon n-channel power mosfet.
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