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CS6N70A3D1-G

Silicon N-Channel Power MOSFET

CS6N70A3D1-G Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:21nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VD

CS6N70A3D1-G General Description

CS6N70 A3D1-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization.

CS6N70A3D1-G Datasheet (235.57 KB)

Preview of CS6N70A3D1-G PDF

Datasheet Details

Part number:

CS6N70A3D1-G

Manufacturer:

Huajing Microelectronics

File Size:

235.57 KB

Description:

Silicon n-channel power mosfet.

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