CS6N70A3D1-G Datasheet, Mosfet, Huajing Microelectronics

✔ CS6N70A3D1-G Features

l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:21nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche energy Te

✔ CS6N70A3D1-G Application

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Paramet

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CS6N70A3D1-G

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Huajing Microelectronics

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📄 Datasheet

Description:

Silicon n-channel power mosfet. CS6N70 A3D1-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the condu

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CS6N70A3D1-G Silicon N-Channel Power MOSFET Huajing Microelectronics